半導(dǎo)體存儲(chǔ)器用半導(dǎo)體器件組成的存儲(chǔ)器稱(chēng)為半導(dǎo)體存儲(chǔ)器；特點(diǎn)：集成度高、容量大、體積小、存取速度快、功耗低、價(jià)格便宜、維護(hù)簡(jiǎn)單。

FEATURES
· No write delays
· Unlimited write endurance
· Data retention greater than 20 years
· Automatic data protection on power loss
· Fast, simple SPI interface, up to 50 MHz clock rate with MR20H40.
· 3.0 to 3.6 Volt power supply range
· Low-current sleep mode
· Industrial (-40 to 85°C), Extended (-40 to 105°C), and AEC-Q100 Grade 1 (-40 to 125°C) temperature range options.
· Available in 8-pin DFN or 8-pin DFN Small Flag, RoHS-compliant packages.
· Direct replacement for serial EEPROM, Flash, and FeRAM
· MSL Level 3

DESCRIPTION
MR2xH40 is a family of 4,194,304-bit magnetoresistive random access memory (MRAM) devices organized as 524,288 words of 8 bits. They are the ideal memory solution for applications that must store and retrieve data and programs quickly using a small number of I/O pins. They have serial EEPROM and serial Flash compatible read/write timing with no write delays and unlimited read/write endurance. Unlike other serial memories, with the MR2xH40 family both reads and writes can occur randomly in memory with no delay between writes.

The MR2xH40 family provides highly reliable data storage over a wide range of temperatures. The MR20H40 (50MHz) is offered with Industrial (-40° to +85 °C) range. The MR25H40 (40MHz) is offered with Industrial (-40° to +85 °C), Extended (-40 to 105°C), and AEC-Q100 Grade 1 (-40°C to +125 °C) operating temperature range options. Both are available in a 5 x 6mm, 8-pin DFN package. The pinout is compatible with serial SRAM, EEPROM, Flash, and FeRAM products.

      有限公司是英尚國(guó)際有限公司旗下大陸子公司，成立于2007年，是一家專(zhuān)業(yè)的靜態(tài)隨機(jī)記憶體產(chǎn)品及方案提供商，十年來(lái)專(zhuān)業(yè)致力代理分銷(xiāo)存儲(chǔ)器芯片IC, SRAM、MRAM、pSRAM、 FLASH芯片、SDRAM（DDR1/DDR2/DDR3）等,為客人提供性?xún)r(jià)比更高的產(chǎn)品及方案。原廠供貨，交期保障，價(jià)格優(yōu)勢(shì)，專(zhuān)業(yè)服務(wù)。  
    產(chǎn)品簡(jiǎn)介
    1. Low power SRAM (低功耗靜態(tài)隨機(jī)存儲(chǔ)器)1Mbit~8Mbit.
    2. SPI SRAM(串行靜態(tài)隨機(jī)存儲(chǔ)器)64Kbit~512Kbit.
    3. PSRAM[Pseudo SRAM,UtRAM] (虛擬靜態(tài)隨機(jī)存儲(chǔ)器)4Mbit~64Mbit.
    4. Cellular RAM(偽靜態(tài)隨機(jī)存儲(chǔ)器)4Mbit~64Mbit.
    5.NvSRAM,F-RAM,MRAM(非易失性存儲(chǔ)器)256Kbit~1Gbit
    6. MCP 512Mbit+256Mbit,1Gbit+512Mbit,64Mbit+32Mbit,128Mbit+64Mbit,32Mbit+16Mbit
    7. Mobile SDRAM/DDR(低功耗SDRAM/DDR)128Mbit~512Mbit